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What Is a PN Junction Solar Cell
What is PN:The p-type semiconductor and n-type semiconductor are fabricated on the same semiconductor (usually Si or GE) substrate by different doping processes
What Is The Difference Between N-type And P-type Solar Cell
what is P-type solar cell:P-type solar cell semiconductor is also called hole semiconductor. P-type semiconductors are impurity semiconductors with hole concent
Anti Reflective Coating For GaAs Solar Cell
Highest Quality Products-GaAs solar cell from Nanjing Hemu International Trade Co.,ltdA systematic design of anti-reflective layer using embedded plasmonic nano
Why P-type Is Thicker Than N-type In Solar Cell
In most cases, the thickness of the p-layer is greater than that of the n-layer because the p-type substrate absorbs the most sunlight. The n-type layer should
How GaAs Solar Cells Work
As a representative of the second generation semiconductor materials, arsenide has important applications in high energy collision physics experiments, aerospac
GaAs Semiconductor Properties & Characteristics
Common semiconductor materials:silicon (SI), germanium (GE), compound semiconductor, such as gallium arsenide (GaAs), etc; Doping or making other compound semico
Fabricating GaAs Solar Cell
Fabricating of gallium arsenide:Similar to silicon, gallium arsenide can be divided into bulk single crystal and epitaxial materials. Bulk single crystal can be
Dimension of Unit Cell of GaAs
Nanjing Hemu International Trade CO.,ltd offer understanding on the physical factors affecting dimension uniformity in ordered GaAs arrays grown on silicon.
How Can I Calculate Absorption Of GaAs Thin Film Solar Cell
A scientific design and analysis of GaAs thin film cell incorporated with a periodic silver nanoparticles (NPs) structure to reinforce light absorption is prese
Front Grid Design For GaAs Solar Cell
An extensive analysis of the front contact influence on concentrator GaAs solar cell performance has been administered . The fill factor, circuit voltage and ef
Spectrum For GaAs Solar Cell
At present, the experimental techniques of deep level detection in semiconductors can be roughly divided into three categories, namely junction capacitance tech
Gallium Arsenide Germanium Solar Cell (GaAs)
SiGe:Because of the small energy barrier, the power consumption is low and the switching speed is higher; The noise coefficients of low frequency and RF range