An extensive analysis of the front contact influence on concentrator GaAs solar cell performance has been administered . The fill factor, circuit voltage and efficiency are calculated by varying the front contact specific resistance and therefore the metal sheet resistance for 500X, 1000X and 2000X. An optimum front grid design has also been developed. The simulations are administered employing a 3D model supported distributed circuit units, and by a classic lumped model, showing the necessity to use distributed models to realize an accurate concentrator photovoltaic cell modeling also as a particular front grid design.
One method to strengthen the front grid conductivity without inducing additional shading is to extend the cross section of the contact without increasing the width. This further increases the GaAs photovoltaic cell's efficiency via allowing more photons to be absorbed, thus increasing the short current for a given grid coverage. But, as the fraction of the sunshine being redirected to the CPV cell for a particular geometry is usually not precisely known, this extra degree of freedom within the design creates an additional variable to be taken under consideration in modeling such GaAs solar cell .
Running extensive optical and semiconductor models over such a huge parameter space becomes computationally expensive, creating the necessity for a computationally efficient model for optimizing partially redirecting front grids gallium arsenide under concentration. The goal of this study was to seek out an easy-to-use, computationally inexpensive, and yet accurate model for front grid optimization of concentrator gallium arsenide.
It is worth mentioning again that the goal of the model is to calculate GaAs solar cell efficiencies for various front grid designs. The front grid influences the electrical behavior of the gallium arsenide mainly through the series resistance. A schematic of those three sources of resistance and therefore the layout of a typical front grid.