Because of the small energy barrier, the power consumption is low and the switching speed is higher; The noise coefficients of low frequency and RF range are low; Because of the high power output, it is possible to carry out a new design; The whole manufacturing process can adopt an economical and effective solution, because SiGe manufacturing process retains most of the cost-effectiveness of silicon manufacturing process.
The germanium silicon-based gallium arsenide material comprises a silicon substrate with a periodic groove structure on the surface, a germanium intermediate layer attached on the surface of the silicon substrate, and a gallium arsenide layer attached on the surface of the germanium intermediate layer, Thus, high quality single crystal and ultra-thin GaAs can be grown on Si (100) substrate on IIIv MBE equipment.
High efficiency multi juction GaAs cells have been proved, but space cells have made great progress in forming large area and high efficiency GaAs cells.An important advance is the ability to grow GaAs layers by organic metal vapor phase epitaxy (omvpe) in a large-scale production reactor, which can accommodate 1500 cm2 of GaAs substrate area per run and provide a very uniform layer over a large area.In the further development, GaAs substrate is replaced by GE substrate, and the atomic lattice spacing of Ge substrate is very similar to that of GaAs.GaAs / Ge cells have an area of over 36 cm2, average BOL efficiency of 18% to 19%, excellent radiation resistance (EOL efficiency, 14%), and less output degradation at high temperature.
GaAs solar cells are made of GaAs materials. Solar cells, also known as "photovoltaic devices" or "photocells", are solid-state electronic devices that use photovoltaic effect to directly convert solar energy into electrical energy. The band gap of GaAs solar cells is wider than that of conventional silicon solar cells, so the photoelectric efficiency of GaAs solar cells is higher than that of conventional silicon solar cells, and the multi junction solar cells are more than 50%. The temperature resistance of the battery is higher than that of the conventional silicon battery, but it is brittle.