P-type solar cell semiconductor is also called hole semiconductor. P-type semiconductors are impurity semiconductors with hole concentration much higher than free electron concentration. P-type semiconductors are formed by doping trivalent elements (such as boron) into pure silicon crystals to replace the silicon atoms in the lattice. In p-type semiconductors, the hole is multi carrier and the free electron is few carrier. Holes are mainly provided by impurity atoms, and free electrons are formed by thermal excitation. The more impurities are added, the higher the concentration of multi carrier (hole) and the stronger the conductivity.
N-type solar cell semiconductor is also called electronic semiconductor. N-type semiconductor is the impurity semiconductor whose free electron concentration is much higher than the hole concentration. N-type semiconductors are formed by doping pentavalent elements (such as phosphorus) into pure silicon crystals to replace silicon atoms in the crystal lattice. In n-type semiconductors, the free electrons are many and the holes are few. The free electrons are mainly supplied by impurity atoms, and the holes are formed by thermal excitation. The more impurities are added, the higher the concentration of free electrons and the stronger the conductivity.
N-type solar cell can be obtained by doping donor impurity into semiconductor; Donor impurity: an element in group V of the periodic table, such as arsenic or antimony.
P-type solar cell can be obtained by doping acceptor impurity into semiconductor; Acceptor impurity: an element in group III of the periodic table, such as boron or indium.
Conductivity of p-type solar cell: it depends on hole conduction. The more impurities are added, the higher the concentration of multi carrier (hole) and the stronger the conductivity.
Conductivity of n-type solar cell: the more impurities are added, the higher the concentration of free electrons, and the stronger the conductivity.
P-type solar cell and n-type solar cell have little relationship with the material itself, but have close relationship with the doping of materials. For example, silicon, boron ion is p-type, and p-doped ion is n-type. The other semiconductors are compound semiconductors, such as gallium arsenide and zinc oxide. It is also mentioned that the semiconductor properties of graphene and carbon nanotubes have a great relationship with the preparation of materials, which can be made of metals by the semiconductor industry. The choice is based on the number of children in it, the electron is n-type, and the hole is p-type