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A systematic design of anti-reflective layer using embedded plasmonic nanoparticles is investigated for a thin-film GaAs photovoltaic cell . An anti-reflective layer that's made up of ITO or SiO2 is assumed during which Al nanoparticles are embedded inside them to control the absorption and hence the photocurrent of a 500-nm GaAs photovoltaic cell . it's investigated that the Al nanoparticles embedded inside the anti-reflective coating improve the photocurrent of a GaAs photovoltaic cell . As an example , the 15.37 mA photocurrent is obtained for 500-nm bare GaAs cell, and it reached to 17.25 mA/cm2 and 20.18 mA/cm2 when an ITO anti-reflection is employed with Al nanoparticles on top and inside that, respectively. It increases to 21.94 mA/cm2 and 24.98 mA/cm2 within the case of the anti-reflective layer made up of SiO2 and Al nanoparticles at the highest side or inside that, respectively. Finally, employing a double anti-reflective layer that's made up of SiO2-TiO2, the utmost photocurrents of 23.79 mA/cm2 and 24.68 mA /cm2 are obtained when Al nanoparticles are at the highest side or inside that, respectively. The simulation results show that the embedding Al nanoparticles within the anti-reflective layer can improve the photocurrent of a thin-film GaAs photovoltaic cell .
The likelihood of using gallium arsenide top layers as anti reflective coating and optical diffusor in high-efficiency triple junction gallium arsenide. Anti reflective coating behaviour of thin, nanoporous gallium arsenide layers has been demonstrated, whereas initial experiments on applying these porous layers on top of a triple junction gallium arsenid photovoltaic cell structure also suggest an optical diffusion of the incident light within the porous layer.
Conductive and anti reflective indium-tin-oxide (ITO) has been prepared by RF sputtering in Ar atmosphere, without introducing oxygen into the plasma and on temperature substrates so as to be used as anti reflective coating on gallium arsenide. The electrical resistivity of the n-type, degenerate ITO films exhibited a discount with deposition rate and a rise with total pressure, while it had been independent of the film thickness within the range of 20 nm to 130 run. Further reduction of resistivity, up to 4 × 10−4 Ωcm, was obtained by annealing at 400°C. this is often rock bottom resistivity that has been reported for TTO films prepared under similar conditions. The transmittance of 90 nm thick ITO film was 85% and therefore the reflectance of p/n GaAs photovoltaic cell was reduced from 35% to twenty after the ITO layer application.