40% Concertrator Triple Junction Solar Cell
GalnP2/InGaAs/Ge triple junction solar cell
Multilayer antireflective coating provides low reflectance over a wavelength range of0.3 to 1.8
Special coating design for OSR
Stable performance from 500 to 1000 suns
Optimized grid design, higher Pmax
Double sided welding
Size can be customized
To adapt to the harsh climate
V Capacity : 3Mw/month
|
Base Material |
GalnP2/InGaAs/Ge |
AR coating |
TiO,JAl2O3 |
Chip Size |
5.1X6 mm2士0.01mm2 |
Active Cell Area |
25 mm2 |
Cell Thickness |
175土20μm |
Polarity |
N on P |
Thickness of front contact |
~6μm. |
Thickness of back contact |
~4μm |