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GaAs Cell 10.10mm

GaAs Triple Junction Gallium Arsenide Solar Cells 10.10mm

GalnP2/InGaAs/Ge triple junction solar cell with stability performance

Multilayer antireflective coating provides low reflectance over a wavelength range of0.3 to 1.8 um

Special coating design for OSR

Stable performance from 500 to 1000 suns

Optimized grid design, higher Pmax

Double sided welding

Size can be customized

To adapt to the harsh climate

Capacity : 3Mw/month

Design and mechanical data

Base Material GalnP2/InGaAs/Ge
AR coating TIO/Al2O3
Chip Size 11 X 10.2 mm2士0.01mm2
Active Cell Area 100 mm2
Cell Thickness 175土20μm .
Polarity NonP
Thickness offront contact ~6 μm
Thickness ofback contact ~4μm