GalnP2/InGaAs/Ge triple junction solar cell with stability performance
Multilayer antireflective coating provides low reflectance over a wavelength range of0.3 to 1.8 um
Special coating design for OSR
Stable performance from 500 to 1000 suns
Optimized grid design, higher Pmax
Double sided welding
Size can be customized
To adapt to the harsh climate
Capacity : 3Mw/month
| Base Material | GalnP2/InGaAs/Ge |
| AR coating | TIO/Al2O3 |
| Chip Size | 11 X 10.2 mm2士0.01mm2 |
| Active Cell Area | 100 mm2 |
| Cell Thickness | 175土20μm . |
| Polarity | NonP |
| Thickness offront contact | ~6 μm |
| Thickness ofback contact | ~4μm |