Design and Mechanical Data of GaAs Solar Cell
Base Material: GalnP2/InGaAs/Ge
AR coating: TIO/Al2O3
Chip Dimension/Size:11 X 10.2 mm2士0.01mm2
Active Cell Area:100 mm2
Cell Thickness:175土20μm .
Polarity: N on P
Thickness of front contact: ~6 μm
Thickness of back contact: ~4μm
Nanjing Hemu International Trade CO.,ltd offer understanding on the physical factors affecting dimension uniformity in ordered GaAs arrays grown on silicon. The length and diameter distributions within the initial stage of growth aren't much influenced by the Poissonian fluctuation-induced broadening, but rather are determined by the long incubation stage.And the dimensions distributions are according to the double exponential shapes typical for macroscopic nucleation with an outsized critical length after which the nanowires grow irreversibly. The dimensions uniformity is dramatically improved by increasing the As4 flux, suggesting a replacement path for obtaining highly uniform arrays of GaAs nanowires on silicon.
Gallium arsenide GaAs cell will bring an enormous market.The prevailing silicon semiconductor market may be a pretty good dimension for a market. Gallium arsenide support the signal speed that's needed to implement 5G. High-resolution transmission microscopy reveals that clusters as small as 3.5 nanometers have good crystalline order with a lattice constant adequate to that of bulk Gallium arsenide. Study of the microcrystallite surfaces by x-ray photoelectron spectroscopy shows that they're covered with a shell (1.0 to 1.5 nanometers thick) of native oxides of gallium and arsenic (Ga2O3 and As2O3), whose presence could explain the low luminescence efficiency of the clusters. Optical absorption spectra of the supported Gallium arsenide are according to the blue-shifted band edge expected for semiconductor microcrystallites within the quantum dimension regime.