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Gallium arsenide semiconductor has n-type and p-type, depending on what you doped. It can be determined by Hall effect test. Thermal probe method can also be used,P-type is beryllium doped, n-type is tellurium doped, GaAs is a three five group compound semiconductor, beryllium is a two group element, substitutional gallium ionizes to form holes, tellurium is a six group element, substitutional arsenic ionizes to form electrons.
Gallium arsenide (GaAs), a crystal alloy used in lasers (including DVD players), has optical properties (band gap width is directly related to optical properties). In fact, the work of this material almost proved the electron gas model.
However, in Si and GaAs, p-type doping has been well confirmed. Among the important compound semiconductors where p-type doping is extremely difficult, there are few important compound semiconductors. For example, it is very difficult to obtain p-type conductivity in ZnO. Similarly, there are applications even in GaN, and it is not easy to obtain p-type conduction in GaN. It involves many process steps such as Mg doping and annealing activation. The difficulty of doping and activation is one of the reasons why n-type semiconductors are better than p-type semiconductors.
There is another class of semiconductors that consists entirely of organic materials (organic as in long chains of C, H, N, O). Everything said here about inorganics is correct in principle, but the physics involving this class is considerably more complicated.
GaAs is actually a wide band gap semiconductor, which can be effectively doped to change its performance, although it can not be directly used in electronic circuits unless its excellent thermal conductivity is used. It has a special use for photonics. Materials engineers are considering how to make this material compatible with the "traditional" CMOS Si process, although this is usually avoided if there are cheaper alternatives. Even industrial diamonds consume a lot of energy