Gallium arsenide (gallium arsenide), chemical formula GaAs. Black-gray solid, melting point 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. Gallium arsenide is an important The semiconductor material. It belongs to group III-V compound semiconductors. It belongs to the zinc blende type crystal lattice structure, the lattice constant is 5.65×10-10m, the melting point is 1237℃, and the band gap is 1.4 electron volts.
In the higher temperature region, the efficiency will not decrease, and the thickness of GaAs cell material itself is only a few microns, slightly less than 1 micron.The photovoltaic capacity of GaAs solar cells coated with Au nanorods on the patterned surface is greatly increased by 14.1% to 19.9% and 2.5 to 3.6 times.
GaAs is an important semiconductor material for high cost and high efficiency solar cells,The bandwidth of GaAs makes it one of the most efficient solar cells in the world. These cells are important competitors in the solar cell industry, especially in the areas that need high efficiency.
According to the high electron mobility of gallium arsenide material, it is an ideal device material for the development of ultra-high-speed computers. Its electron mobility is about 5 times higher than that of silicon, and its operation speed is much higher than that of silicon devices. In the 1970s and 1980s, people predicted and optimistic that gallium arsenide materials will play an important role in the development of ultra-high-speed computers, and invested considerable human and financial resources in research. However, due to some technical and cost issues, and the sudden emergence of silicon materials, complementary metal oxide semiconductor circuits have been developed, which have low operating voltage, low power consumption, high speed, and low cost, which can meet the needs of the devices at the time. As a result, competition pressure for gallium arsenide has been formed, causing the development of ultra-high-speed computers by gallium arsenide to temporarily slow down. In recent years, with the end of the Cold War, many military technologies have been transferred to civilian use. Due to the unique high-frequency, high-speed, low-noise, and low-voltage characteristics of gallium arsenide materials, it plays an important role in high-frequency and high-speed transmission of information and digital processing. Electronic devices developed with gallium arsenide materials: such as metal semiconductor field effect transistors, high mobility transistors, microwave monolithic integrated circuits, heterojunction bipolar transistors (CDB), etc. in mobile communications, optical fiber communications, satellite broadcast communications Silicon devices play an irreplaceable role in silicon devices, newspaper processing, and other areas. The promotion of these applications has greatly promoted the development of gallium arsenide materials.