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Zincblende Architecture Of A GaAs Unit Cell

What is Zincblende:

Coordination polymers are a class of compounds formed by metal ions, metal clusters and some organic ligands through self-assembly mechanism. Coordination polymers have been widely used in the fields of chemistry, materials and biological sciences due to their various structures and unique properties,Lead zinc ore is a mineral rich in lead and zinc. Lead and zinc are widely used in electrical industry, machinery industry, military industry, metallurgical industry, chemical industry, light industry and pharmaceutical industry. In addition, lead is also widely used in nuclear industry, petroleum industry and other sectors.

Zincblende architecture of a gaas unit cell

GaAs (zinc-blende) PHASE Exp.
a0 (A) 5.750 5.653
E0 (eV/GaAs) 6.22 6.7
B0 (GPa) 62.44 75

GaAs unit cell nanowires usually exhibit wurtzite structure (WZ), while the WZ (1010) side has been observed experimentally. The surface relaxation and surface energy of GaAs unit cell (1010) are calculated by first principles. The results show that: (1010) a surface only exhibits atomic relaxation, and the surface energy is 40.6% × 1020meV/m2; The surface energy of (1010) B is 63.5% × Compared with ZB (110) surface, WZ (1010) a surface has lower surface energy, and (1010) a surface has better stability, which indicates the rationality of WZ structure in nanowires whose surface energy plays an important role,A solid-state zinc diffusion method for GaAs unit cell based epitaxial wafer is proposed. ZnO thin film is set on the GaAs epitaxial wafer as zinc source for Zinc diffusion. The ZnO film is arranged on the GaAs unit cell epilayer by sputtering