Which one is better of gaas cells : n-type or p-type?
N-type GaAs Cell Gallium arsenide is degenerate for doping concentration above 5 × 1017 cm–3
P-type GaAs Cell doped Gallium arsenide nanowires models are all direct band gap semiconductors. After substitutional doping, the total density of state curves shift toward higher energy sides and the Fermi level enters into valence bands.
The main difference between p-type GaAs cell and n-type GaAs cell is that the number of electrons. A p-type cell usually dopes its silicon wafer with boron, which has one less electron than silicon (making the cell positively charged). ... N-type cells are successively more efficient and aren't suffering from light-induced degradation.
The GaAs grown by MBE is slightly type p cell. Even in Si Gallium arsenide the absorber is p-type with a shallow n-type layer on top. Increase in electron density in semiconductor device and hole density in n-type one are more sensible.
GaAs-on-Ge cells use n-type Ge; the triple-junction and newer four-junction cells use p-type.
A structure of n-type Graphene with p-type Gallium arsenide absorber layer is meant by lower volume of fabric which contains more economic in present status.
Different semiconductor materials are wont to design photovoltaic cell and among them, Gallium Arsenide (GaAs) has currently more preferable causes it's several unique properties like flexibility, the broader and direct band gap of 1.42 eV, light weighted with a low-temperature coefficient. The photon absorption constant is higher in its so can easily trap the photons more efficiently which in turns increases the efficiency of the photovoltaic cell and its' temperature coefficient is low and show better performance at low light. due to these properties, Gallium arsenide has obtained an honest position in thin film solar cell within the market. Graphene is employed because the window layer in GaAs photovoltaic cell in research work that was simulated by using numerical analysis. A structure of n-type Graphene with p-type GaAs absorber layer is meant by lower volume of fabric which contains more economic in present status. during this case J sc , FF and V oc are observed with 15.17% conversion efficiency has been found from the structure of Graphene with GaAs photovoltaic cell . Additionally, the performance has been found for the proposed model where increases the temperature decreases the normalized efficiency and it's around -0.031%/°C.