Low Cost Triple junction solar cells, factory direct sales.
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All concentrating cells include the lastest GaInP/GaAs/Ge layers tj solar cells technology, the whole solar cells range profits from decades’ experience on the space field. Nanjing Hemu has already sell over 130 thousand multi junction GaAs solar cells（include single junction solar cells and triple junction solar cells). Additionally to our standard solar cells, offers various possibilities of customized products on individual requirements.
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The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied so as to realize high photovoltaic conversion efficiency. However, large differences within the coefficients of thermal expansion and therefore the lattice parameters of GaAs, Si, and InGaAs have made it difficult to get high-efficiency solar cells grown as epilayers on Si and InP substrates. Two sorts of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the 2 samples are made at temperature . The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of those two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is comparatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction photovoltaic cell alone. This study demonstrates the high potential of mixing mechanical stacked with wire bonding and ITO films to realize high conversion efficiency in solar cells with three or more junctions.