A rapid epitaxial stripping (ELO) method is applied to transfer gallium arsenide (GaAs) single junction (SJ) solar cells to copper tungsten (CuW) substrates. In the ELO process, the time of separating the solar cell epitaxial layer (epitaxial layer) from the main substrate will affect the performance of the device. Therefore, external and internal grooves are designed to shorten the separation time. In addition, a stirrer is used to accelerate the process. It should be noted that the ELO separation time depends on the chip size rather than the size of the substrate. In our ELO etchant, 4 × It only takes about 4 hours for the 4 mm2 chip to be separated from the main substrate. After ELO process, the efficiency of ELO solar cell can reach 15.81%, which is 15.27% higher than that of ref cell grown on GaAs substrate.
Copper tungsten alloy ring resistance conductive alloy ring combines the advantages of metal tungsten and copper.
At very high temperatures, such as above 3000 ℃, copper in the alloy is liquefied and evaporated, which absorbs a lot of heat and reduces the surface temperature of the material. Therefore, this kind of material is also called metal sweating material.
3.0 tungsten copper rod electrode resistance rod W85 conductive round rod has excellent conductivity and thermal conductivity, and tungsten copper alloy (composition generally ranges from wcu7 to wcu50) has uniform microstructure, high strength, arc ablation resistance and high density; It has moderate conductivity and thermal conductivity. It is applied to materials, electrical alloys for high-voltage switches, EDM electrodes and Microelectronic Materials. As parts and components, it is applied to aerospace, aviation, electronics, electric power, metallurgy, machinery, sports equipment and other industries.
The problem of low photocurrent of GaInP / (in) GaAs / Ge triple junction stacked solar cell is developed. The bottom cell, middle cell and top cell are theoretically analyzed and designed respectively. The improvement of the window layer design of Ge bottom cell, the introduction of suitable content of in in in GaAs cell, the improvement of N / P structure design of GaInP top cell, and the selection of wide band gap tunneling junction materials have significantly improved the short-circuit current density JSC of the cell, reaching 16.5 ~ 17.5ma/cm2, and the photoelectric conversion efficiency of GaInP / (in) GaAs / Ge triple junction solar cell, thus reaching 27.3% (am0,25 ℃).