Triple junction CPV cells have been widely studied for their advantages such as film feasibility, and efficiency. In order to more add their performance, a wider band gap photovoltaic structure, such as InGaP, is integrated in the two end (2t) series configuration. But, it increases the overall manufacturing cost, and the complex tunnel junction diode connected sub battery is inevitable, and the material is limited by lattice matching. Here, a high efficient and stable broadband gap perovskite PV with a band gap (1.8-1.9 EV) equivalent to InGaP has been developed. It can be used as a stable low cost additional layer, and further improve the performance of GaAs solar cells as a series configuration. The efficiency was increased from 21.68% to 24.27% (2t configuration) and 25.19% (4T configuration).
This method is also feasible for thin film Triple junction CPV cells , which is crucial to reduce its commercial manufacturing cost, with performance increased from 21.85% to 24.32%, and excellent flexibility in series configuration (1000 bends). In addition, the potential way to obtain more than 30% stable perovskite /gaas series is considered, which is equivalent to ingap/gaas with lower cost. This work can be the first step in achieving the goal of improving the availability of Triple junction CPV cells technology, improve performance without significantly increasing costs, and apply to applications of light weight and flexibility.
We introduce the comparison of p-i-n Triple junction CPV cells and perovskite photovoltaic cells connected in series or in parallel. It is based on two types of series connection with non integral connection and experimental sub battery. The results based on series simulation are discussed. The results show that parallel connection is better than series connection even when the photocurrent of sub cells is unbalanced and the open circuit voltage (VOC) is close to each other. The Triple junction CPV cells shadowing effect of mapbi3 film proves that the efficiency of parallel connected cells exceeds 22%, and the realized short circuit current density (JSC) - 39 MA / cm2.