Due to the characteristics of direct band gap, band gap width matching with solar spectrum and high light absorption coefficient, the light absorption efficiency and photoelectric conversion efficiency of III-V nanowires (PVSC) are no less than that of thin film materials.
In the experiment, the photoelectric conversion efficiency of a single GaAs Non-Epitaxial has broken the theoretical limit of 30% of a single solar cell and reached 40%. Therefore, the unique advantages of GaAs Non-Epitaxial solar cells make them have broad application prospects in the field of solar energy development in the future. However, the industrialization of GaAs Non-Epitaxial solar cells is limited by the high cost and complex process in the growth of materials and the preparation of devices. Therefore, in order to reduce the experimental cost and improve the crystal quality of GaAs Non-Epitaxial, it is of great significance to synthesize high-crystal GaAs Non-Epitaxial with high switching ratio and carrier mobility by simple growth process. Based on the study of III-V Non-Epitaxial semiconductor materials, this paper explores the growth of GaAs Non-Epitaxial by chemical vapor deposition (CVD) using solid-state source; The epitaxial relationship between different kinds and particle sizes of catalysts and catalytic growth of III-V Non-Epitaxial was discussed; Through the regulation of experimental conditions, a novel GA GaAs Non-Epitaxial hetero junction structure was successfully prepared, which made a breakthrough in material structure and better applied to the research of solar cells.
The length of GA nanowires was effectively controlled by adjusting the experimental temperatureIt shows that the formation of GA segment nanowires is determined by the diffusion and precipitation process of Ga from Au GA alloy and the equilibrium reached by the vapor reaction of precipitated GA and as. More importantly, this GA GaAs nanowire heterojunction structure has a high Schottky barrier (~ 0.8 EV) at the contact interface between GA and GaAs nanowires, which is attributed to the effect of surface Fermi level effect. The results show that the controllable synthesis of GA GaAs nanowire heterojunction structure has a strong application prospect for Schottky devices and solar cells