High-efficiency double-back field InGaP/gaasdj solar cell,Solar cell is a device widely used to use free and lasting solar energy. Solar cell design began with simple single junction cells, and then turned to multi junction cells for space applications and thin-film solar cells
Under the global illumination of single solar gas mass of 1.5, a single-end InGaP / GaAs Solar Cell with an efficiency of 30.28% is realized in a practical large area of 4 cm2.The DH structure of AlInP barrier increases the peak current of InGaP tunnel junction. It is found that the AlInP barrier directly below the InGaP top cell occupies a part of the back field (hereinafter referred to as BSF) layer, The reason behind such high efficiency in multijunction solar cells is the presence of multiple junction layers. Due to this there is efficient absorption of solar radiation giving higher efficiency which is not in the case of single junction cells. Much research has been carried out to improve the efficiency of multijunction solar cells like increasing the junctions of the cell.In addition, InGaP tunnel junction reduces the absorption loss in GaAs tunnel junction and increases the photogenerated current in GaAs bottom cell.
The proposed solar cell structure is mainly composed of three layers - top cell, tunnel junction and bottom cell. The optimized BSF layer can not only prevent carrier recombination, but also help improve the efficiency of solar cells. Therefore, the presence of the BSF layer is critical to the performance of the solar cell.The top and bottom batteries consist of a back surface field (BSF) layer and a window layer. The window layer usually consists of a very high band gap material that allows maximum solar radiation to enter the device
In addition, the BSF layer we are interested in is an important layer in the solar cell structure, which prevents carrier recombination by repelling carriers back to the p-n junction.