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GaAs Unit Cell Density

Gallium is a kind of silver white scattered metal with density of 5.904, melting point of 29.78 ℃, boiling point of 2403 ℃, soft and brittle. The chemical properties of gallium are not vivid. Gallium forms an oxide surface film in the air, making it stable and stable. At room temperature, oxygen and water react with slow acid, but the effect is slow with dilute acid. But it is soluble in hot nitric acid, concentrated and hot concentrated perchloric acid, and it also dissolves in strong alkali to form gallium salt, so gallium is. Gallium and halogen effect, the formation of gallium trihalide and gallium halide.

GaAs Unit Cell Density

Gallium arsenide was put into use in 1964. Gallium arsenide can be made into semi insulating high resistance materials with resistivity more than three orders of magnitude higher than that of silicon and germanium, which can be used to make integrated circuit substrates, infrared detectors, infrared detectors, etc γ Photon detector, etc. Because its electron mobility is 5-6 times higher than that of silicon, it has been widely used in microwave devices and high-speed digital circuits.

The semiconductor devices made of gallium arsenide have the advantages of high frequency, high temperature, low temperature, low noise and strong radiation resistance.

In addition, it can also be used to fabricate bulk effect devices. Gallium arsenide is one of the semiconductor materials, which has many advantages. However, the crystal triode made of gallium arsenide has low magnification and poor thermal conductivity, so it is not suitable for making high-power devices. Although gallium arsenide has superior properties, it is required to produce high purity single crystal materials with ideal chemical ratio due to its decomposition at high temperature.

Hardness (NUP) kg / mm2 : 750
Density, g / cc : 5.37
Modulus of fracture, MPa : 13.8
Fracture toughness MPA / M : 0.31