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GaAs MJ Solar Cell Schematic

A GaAs mj solar cell consists of a top cell mainly composed of GaInP, a middle cell mainly composed of InGaAs and a bottom cell mainly composed of Ge, An AlInP (P +) / AlGaAs (P + +) - GaInP (n + +) / AlInP (n +) or AlGaInP (P +) / AlGaAs (P + +) - GaInP (n + +) / AlInP (n +) tunneling junction connection structure is arranged between the top cell and the middle cell. Due to the above tunneling junction connection structure, the GaAs mj solar cell of the invention can not only significantly reduce the reflection of incident light, improve the current density of the middle cell, but also improve the conversion efficiency of the three junction cell

gaas mj solar cell schematic

As a new generation of high-performance and long-life space main power supply, GaAs mj solar cells will gradually take the lead

Si battery is widely used in space photovoltaic field. Air China

With the rapid development of aerospace industry, high-performance and long-life space main power supply is urgently needed. at present

In the field of GaAs battery, there is a big gap with the advanced level of foreign countries, so we must speed up the research and development, and focus on the key technologies

Development of high efficiency GaAs mj solar cell with more than three junctions (non condensing, condensing and thin film)

GaAs mj solar cells made of multiple material layers can have multiple band gaps, and therefore will respond to multiple wavelengths of light, capturing and converting some energy, which would otherwise be lost due to the aforementioned relaxation.

Therefore, the performance of GaAs mj solar cells in the ground environment is not as good as that achieved in the laboratory. In addition, the design of the GaAs mj solar cell allows the current to be matched under STC, but not necessarily under field conditions. QE(λ) can be used to compare the performance of different technologies, but QE(λ) don't not contain the information of sub-battery current matching. An important point of comparison is the output power per unit area produced by the same incident light.