Flexible single junction III-V GaAs solar cells based on single crystal like GaAs thin films directly grown on metal strips. Epitaxial (AL) GaAs thin film structure is developed on flexible polycrystalline Hastelloy belt, The crystallinity conversion buffer layer is used for photovoltaic devices with front lighting geometry. GaAs solar cells show good photovoltaic characteristics under am 1.5g 1-sun light. An open circuit voltage of 330mv, a short circuit current of 21ma / cm2 and a fill factor of 73 result in a conversion efficiency of about 5%. Further improvements in semiconductor film quality, device design and manufacturing process optimization will improve device performance characteristics. This new technology has the potential of the next generation of low-cost, high-efficiency flexible photovoltaic devices.
Energy has evolved into the most important material basis for social progress in the survival and development of human society. With the development of society, non renewable energy such as oil, natural gas and coal are gradually reduced. Therefore, it is urgent to develop green energy. Solar energy is an inexhaustible new energy. Therefore, the research on new energy and the development of solar cell technology will alleviate the shortage of energy in the future to a certain extent. Compared with rigid solar cells, flexible thin film solar cells have a wide range of substrate materials (such as metal, glass, plastic, etc.), light weight, bendable, good surface coverage and other advantages. They have a wide application prospect in aerospace and military fields. Therefore, flexible thin-film solar cells have become the top priority in the development of solar cell technology in the future. This topic explores a new type of flexible thin-film solar cell suitable for aerospace, military and civil use. Through theoretical calculation and design simulation, a flexible thin-film solar cell model is established.
The high-efficiency lattice mismatched three junction GaAs epitaxial layer is used as the functional area of the solar cell, and the flexible thin-film metal or organic matter is used as the solar cell substrate, The epitaxial layer and flexible substrate are combined by bonding technology. Through the research of this subject, the simulation design and anti irradiation design of each functional layer of GaAs solar cell are completed, and a number of processes such as lattice mismatch epitaxial growth, bonding, lithography, evaporation antireflection film and dicing are broken through. Finally, a flexible thin-film GaAs solar cell with photoelectric conversion efficiency of 27.08% (25? C, AM0) is prepared.