Concentrator photovoltaics close up or alternative products , you can choose our GaAs Triple Junction Gallium Arsenide Solar Cells.
The CPV cells looks like a device with two end structure from the outside. It is constructed of III-V semiconductor layers, which are connected to silicon sub cells at the atomic level. The key to achieving record power conversion efficiency is the use of a semiconductor material based on gallium phosphide indium arsenide (GaInAsP) in intermediate cells.
New materials enable us to further improve the life of charge carriers, so as to achieve higher cell voltage. We are glad to see that our material development has successfully promoted the improvement of III-V / Si three junction solar cells.
Scientists say the cell could be used in electrically powered aircraft and UAVs.
A III-V series solar cell grown directly on silicon achieves a conversion efficiency of 25.9%. This cell is an improved version of the group III-V solar cell with an efficiency of 34.5%. The cell is manufactured by a process called direct wafer bonding, in which the group III-V layers are first deposited on the aluminum gallium arsenide (GaAs) substrate and then pressed together.
The cost of producing solar cells based on group III-V element compounds (named according to the group of element periodic table to which they belong) has limited such devices to niche applications, including UAVs and satellites. In these applications, low weight and high efficiency are more urgent than the cost of energy generated.
A III-V multi junction solar cell is said to have the potential to achieve nearly 50% power conversion efficiency. The efficiency of series cell device using III-V material is 32.9%.