With the deployment of the national space strategic plan, space satellite technology has become the main field of development in the world in the 21st century, and space power is the main component of space satellites, and its photoelectric conversion efficiency is a key factor in the development of space technology. Layered solar cells can effectively improve the photoelectric conversion efficiency of the gaas solar cell, but the preparation process is complicated, the cost is high, and it is difficult to apply to industrial production.The surface microstructure can inhibit the reflection of incident light, enhance the light absorption intensity of the surface of the gaas solar cell absorption layer, and improve the gaas solar cell's Photoelectric conversion efficiency.
Therefore, scientific researchers are committed to the anti-reflection research of the surface microstructure. This article takes the gaas solar cell as the research object, and uses the femtosecond laser to prepare the anti-reflection microstructure on the GaAs solar cellsurface, in order to improve the photoelectricity of the GaAs solar cell.
Conversion efficiency provides an effective experimental basis. Through a suitable processing environment, the optimized femtosecond laser process parameters are used to process the surface of GaAs/Ge single junction heterogeneous cells. At the same time, femtosecond lasers are used to irradiate different gaas solar cell materials (GaAs/Ge Single junction heterogeneous cell and gallium arsenide double junction heterogeneous cell) surface preparation of microstructures. The interaction between different microstructures and incident light at different wavelengths is analyzed, and the formation mechanism of different microstructures is explored through experiments.
The following conclusions are drawn: The effects of different processing environments (air, ethanol, distilled water) on the microstructures prepared by femtosecond lasers on the surface of GaAs/Ge single junction heterogeneous cells were studied. The femtosecond lasers in different processing environments were studied. The scanned surface is characterized, and the results show that the microstructure prepared in the distilled water environment is 1 to 2 orders of magnitude smaller than that in the air environment, and the distribution is uniform, and its depth range is controlled within 100-350nm; the microstructure prepared in the distilled water environment The structure is more complex than in the ethanol environment, and the number density of the protrusion structure.
A multi-layer anti-reflection coating for gaas solar cell, comprising at least two layers of anti-reflection film, formed by stacking two or more of SiNX, MgF2, TiOX, Al2OX, SiO2, ZnO thin films; the multi-layer anti-reflection film The film uses technologies such as PECVD and EBE to grow SiNX, MgF2, TiOX, AlOX, SiO2, ZnO and other thin films on the GaAs solar cell window layer or top cell window layer, forming a multilayer anti-reflective film by multi-layer stacking. Structure: Through the material selection, thickness matching and optical path design of the sub-layer film, the best multi-band anti-reflection effect is achieved. It improves the efficiency of the gaas solar cell while taking into account the requirements of anti-ultraviolet, anti-aging and high temperature resistance. It is a kind of application in GaAs It is an ideal anti-reflection film structure for gaas solar cells.