• contact@he-mu.com
  • 24hr / 7 days

Home / GaAs Cell News / Band Gap Engineering of Multi-Junction Solar Cells: Effects of Series Resistances and Solar Concentr

Band Gap Engineering of Multi-Junction Solar Cells: Effects of Series Resistances and Solar Concentr

According to the single diode equivalent circuit model of photovoltaic cells and the mathematical model of three junction gallium arsenide (GaInP / GaInAs / Ge) solar cells, the calculation method of series resistance of solar cells is obtained. The series resistance of three junction gallium arsenide concentrator cells at different temperatures (298318338 and 358 K) and different condensing multiples (200X, 300X, 500X and 1000x) is calculated, and the series resistance of three junction gallium arsenide concentrator cells at different temperatures and different condensing multiples is analyzed.

The results show that when the focusing multiple is 200X, the filling factor of three junction GaAs solar cells decreases from 86.43% of 298 K to 83.60% of 358 K, and the cell efficiency decreases from 37.53% of 298 K to 33.70% of 358 K; When the temperature is 298 K, the filling factor of triple junction GaAs solar cells decreases from 86.43% of 200X to 80.34% of 1000x, and the conversion efficiency first increases from 37.53% of 200X to 38.25% of 500X, and then decreases to 37.43% of 1000x.

Band Gap Engineering of Multi-Junction Solar Cells: Effects of Series Resistances and Solar Concentration

Ultra high power conversion effectiveness (PCE) can be achieved by combining advanced solar cell armature, allowing effective use of a wide range of solar diapason and optic aggregation to reduce the introductory asymmetry between absorbed and emitted radiation, thereby reducing the associated Boltzmann loss. So far, the conversion effectiveness of four junction solar cells has reached a record 46 at the illumination position of 508 sun (1 sun = 100 MW/ cm2). The road to 50 and above effectiveness really requires more complex battery armature and advanced lighting position. One of the introductory mechanisms limiting battery effectiveness at high illumination includes series resistance loss, which is caused by the limited conductivity of the accoutrements involved. It's well known that the series resistance loss will affect the battery effectiveness through the drop of the filling factor (FF), and its breadth is a function of the battery structure used, the accoutrements involved and the light position exposed by the battery. In order to reduce the influence of series resistance loss, colorful strategies have been proposed. In particular, applicable acclimatizing of the frontal gate design should be achieved to find the stylish balance between the gate and contact resistance, the emitter distance resistance, and the murk associated with the frontal contact gate. By reducing the area dependent donation of series resistance, reducing the battery size can also reduce the series resistance loss. Still, these strategies only allow a modest increase in battery effectiveness, and the peak illumination position to achieve maximum effectiveness doesn't exceed 1000 suns. Theoretically proved that this cell armature can achieveultra-high effectiveness at the illumination position of over to 10000 sun without any significant change effect due to series resistance. Still, this conception is still theoretical, and its practical perpetration must overcome numerous specialized challenges.