The procedure for measuring the spectral response of multi junction cells usually requires changing the bias spectrum and voltage bias. The results show that a fine program including optimizing the bias spectrum and voltage is necessary to minimize the measurement artifacts, which will occur if the measured sub cell has non ideal characteristics, such as low shunt resistance or low reverse breakdown voltage.
This measurement artifact is often observed when measuring the spectral response of Ge bottom battery of GaInP / GA (in) as / Ge triple junction battery. The main aspect of the measurement artifact is that the response of another sub unit is measured at the same time, and the signal of Ge sub unit is too low. In addition, the shape of the spectral response curve will be affected under some measurement conditions. In this paper, the measured workpiece is deeply discussed through the measurement results and simulation. Based on this analysis, a detailed program for spectral response measurement of multi junction battery is developed.
Despite the numerous advantages of thin- film silicon (Si) solar cells, their low edge remain a challenge that must be overcome. Effective light application across the solar diapason is needed to achieve edge over 15, allowing them to be competitive with other solar cell technologies. To produce high- effectiveness thin- film Si solar cells, we've developed triple- junction solar cell structures to enhance solar diapason application. To maximize the light operation, in- house ZnOAl layers with high haze rates and high transmittances were developed. In addition, new doping layers, similar as n- type microcrystalline silicon oxide (µc-SiOxH), which has a veritably low refractive indicator, and p- type microcrystalline silicon oxide (µc-SiOxH), which has a wide bandgap, were successfully applied to the optic glass and the window subcaste, independently. Thin- film quality control ways for the deposit of hydrogenated unformed silicon (a-SiH) in the top cell, hydrogenated unformed silicon-germanium (a-SiGeH) or hydrogenated microcrystalline silicon (μc-SiH) in the middle cell, and hydrogenated microcrystalline silicon (μc-SiH) in the nethermost cell were also important factors leading to the product of high- effectiveness triple- junction solar cells. As a result of this work, an original effectiveness of16.1 (in- house measurement) in the a-SiH/ a-SiGeH/ μc-SiH mound and a stabilized effectiveness of13.4 ( verified by NREL) in the a-SiH/ μc-SiH/ μc-SiH mound were successfully achieved in a small- area triple- junction solar cell with confines of 1 cm × 1 cm.